| PART |
Description |
Maker |
| UPD44164084F5-E40-EQ1 UPD44164364F5-E50-EQ1 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION 1800万位的SRAM 4条DDRII字爆发运
|
NEC, Corp.
|
| PD46184182BF1-E40-EQ1 PD46184362BF1-E40-EQ1 PD4618 |
18M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44324184F5-E33-EQ2 UPD44324084F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT 36M条位SRAM条DDRII词爆生产营运
|
NEC Corp.
NEC, Corp.
|
| R1Q4A3618BBG-33R R1Q4A3636BBG-33R R1Q4A3618BBG-40R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| R1Q4A3636BBG-60R R1Q4A3618BBG-60R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
http://
|
| R1QEA7236ABG R1QBA7236ABG R1QBA7218ABG R1QBA7236AB |
72-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
